Sub-10 nm patterning of few-layer MoS2 and MoSe2 nanolectronic devices by oxidation scanning probe lithography

The properties of 2D materials devices are very sensitive to the physical, chemical and structural interactions that might happen during processing. Low-invasive patterning methods required fabricate at nanoscale. Here we developed a process combines oxidation scanning probe lithography (o-SPL) oxygen plasma nanoribbon field-effect transistors nano-constrictions on few-layer MoS2 MoSe2. has double role in this process. First, it forms thin, uniform oxide layer top flake surface enable o-SPL nanopatterning with full control shape size. Second, thins down flake. Both plasma-based oxides soluble deionized H2O, which enabled etching definition electrically isolated nanoribbons. accuracy robustness was applied pattern sub-10 nm wide constrictions transistors.